MCQs on Analog Electronics

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01․ Which are the ways to convert an alternating current into a direct current ?
Half-wave rectification.
Center-Taped Full-wave rectification.
Bridge Full-wave rectification.
All the above.

All configuration works as rectifier or converting AC into DC. Half-wave rectification requires a single diode, center tapped transformer requires two diodes and bridge configuration requires four diodes.

02․ Which is the third region where no charge carriers are present when n-type and p-type are attached together ?
Forward region
Depletion region
Reversed region
None of the above

When two materials i.e. n-type and p-type are attached together, a momentary flow of electrons occur from n to p side and holes from p to n side resulting in a third region where no charge carriers are present and they become immobile.

03․ Which types of device is the diode ?
None of the above

A diode is one of the simplest semiconductor devices, which has the characteristic of allowing current in one direction and blocking in the other direction in a full cycle of AC.

04․ How many terminal are present in diode device ?

A diode has two terminal has two terminal called the anode and cathode. Anode is the positive terminal and cathode is the negative terminal.

05․ The number of valence electrons in silicon atom are :

The silicon atom has 14 electrons and electron distributions are {2 8 4}. The outermost shell is called valance shell. So, valence electrons are 4 .

06․ What will be the Potential barrier for Si Diode ?
0.7 V
0.3 V
0.05 V
0.07 V

The barrier potential as its called is from 0.7 V (300K) for silicon diodes depending upon temperature.

07․ Which is the conversion of current done by diode ?
DC to DC
DC to AC
AC to DC
None of the above

Diode converts alternating current to direct current, which flows in only one direction and blocks in other direction. So it become unidirectional or DC.

08․ The number of orbiting electrons in germanium atom are :

Germanium has 32 orbiting electrons, distributing in four shells are {2 8 18 4}. The number of valance electrons are 4.

09․ What will be the Potential barrier for Ge Diode ?

The barrier potential for germanium diode is about 0.3 V (300K) depending upon temperature.

10․ When will be the P-N junction is formed ?
In reverse biased region
In depletion region
Two opposite doped materials
None of the above

P-N junction are formed at the point at which two opposite doped materials (P-type and N-type) are fabricated in special way.