MCQs on Analog Electronics

Page 20 of 33. Go to page
01․ The most commonly used transistor circuit arrangement is
common base.
common emitter.
common collector.
none of the above.

Under construction.
02․ The emitter of the transistor is doped
heavily.
lightly.
moderately.
none of these

Under construction.
03․ For transistor action
the base region must be very thin and lightly doped.
Je must be forward biased and Jc should be reverse biased.
the emitter should be heavily doped.
all of these.

04․ The ICBO is the electric current that flows when some DC voltage is applied
in the forward direction to the emitter junction with collector open.
in the reverse direction to the emitter junction with collector open.
in the reverse direction to the collector junction with emitter open.
in the forward direction to the collector junction with emitter open.

Under construction.
05․ The magnitude of electric current ICBO
depends largely upon the emitter doping.
depends largely upon emitter-base junction base potential.
increases with the increase in temperature.
is generally greater in silicon than in germanium transistor.

Under construction.
06․ The electric current ICBO flows in the
emitter and base leads.
collector and base leads.
emitter and collector leads.
none of them.

Under construction.
07․ Large electric current flow of a BJT occurs
in emitter.
in base.
in collector.
through emitter-collector

Under construction.
08․ A electric current ratio of IC / IE is usually less than one and is called
β.
θ.
α.
ω.

Under construction.
09․ In CE configuration, the input V-I characteristics are drawn by taking
VCE versus IC for constant value of IE.
VBE versus IE for constant value of VCE.
VBE versus IB for constant value of IC.
VBE versus IB for constant value of VCE.

Under construction.
10․ Leakage electric current in CE configuration is
very high.
very small.
normal.
not present.

Under construction.
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