MCQs on Analog Electronics

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01․ The leakage electric current of a pn junction is caused by
heat energy.
chemical energy.
barrier potential.
majority carriers.

Under construction.
02․ The junction capacitance of linearly graded junction varies with the applied reverse bias, VR as
(VR)- 1.
(VR)- 1/2.
(VR)- 1/3.
(VR)1/2.

Under construction.
03․ The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on
width of the depleted region.
mean life time of the holes.
mean life time of the electrons.
junction area.

Under construction.
04․ The arrow direction in diode symbol indicates
direction of electron flow.
direction of hole flow.
opposite to the direction of hole flow.
none of these.

Under construction.
05․ The knee voltage (cut in voltage) of silicon diode
0.2 V.
0.7 V.
0.8 V.
1.0 V.

Under construction.
06․ When the diode is forward biased, it is equivalent to
an off switch.
an on switch.
a high resistance.
none of the above.

Under construction.
07․ Under normal reverse bias voltage applied to diode, the reverse electric current in Si diode
100 mA.
order of micro A.
1000 micro A.
none of them.

Under construction.
08․ Avalanche breakdown in a diode occurs when
potential barrier is reduced to zero.
forward electric current exceeds certain value.
reverse bias exceeds a certain value.
none of the above.

Under construction.
09․ Reverse saturation electric current in a silicon pn junction diode nearly doubles for very
2° rise in temperature.
5° rise in temperature.
6° rise in temperature.
10° rise in temperature.

Under construction.
10․ A forward potential of 10 V is applied to a silicon diode. A resistance of 1KΩ is also in series with the diode. The electric current is
10 mA.
9.3 mA.
0.7 mA.
0.

Under construction.
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