01․ The leakage electric current of a pn junction is caused by
Under construction.
02․ The junction capacitance of linearly graded junction varies with the applied reverse bias, VR as
Under construction.
03․ The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on
Under construction.
04․ The arrow direction in diode symbol indicates
Under construction.
05․ The knee voltage (cut in voltage) of silicon diode
Under construction.
06․ When the diode is forward biased, it is equivalent to
Under construction.
07․ Under normal reverse bias voltage applied to diode, the reverse electric current in Si diode
Under construction.
08․ Avalanche breakdown in a diode occurs when
Under construction.
09․ Reverse saturation electric current in a silicon pn junction diode nearly doubles for very
Under construction.
10․ A forward potential of 10 V is applied to a silicon diode. A resistance of 1KΩ is also in series with the diode. The electric current is
Under construction.
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