01․ Secondary breakdown occures in
Secondary breakdown caused by a localized thermal runway, resulting from high current consideration. In case of BJT, the base current is sufficiently high in saturation region so that the collector - emitter voltage is low. Thus current is increased due to lower collector - emitter voltage. Hence secondary breakdown is occured in BJT.
02․ Common emitter current gain hFE of a BJT is
Common emitter current gain is defined by the ratio collector current and the base current.
03․ The per unit impedance of a synchorous machine is 0.242. If base voltage is increased by 1.1 times, then per unit value will be

04․ When the pn junction is forward biased the sequence of events that take place are
Under construction.
05․ The depletion region of a pn junction is one, that is depleted of
Under construction.
06․ The depletion region with in a pn junction is reduced when the junction has :
Under construction.
07․ A silicon pn junction in forward condition has a voltage drop closer to
Under construction.
08․ For a reverse biased pn junction, the electric current through the junction increases abruptly at
Under construction.
09․ The reverse saturation electric current of a pn junction varies with temperature (T) as
Under construction.
10․ The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as
Under construction.
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